功率MOSFET
可靠性工程
灵敏度(控制系统)
功率(物理)
事件(粒子物理)
电气工程
MOSFET
电压
计算机科学
工程类
电子工程
晶体管
物理
量子力学
标识
DOI:10.1109/redw.2009.5336308
摘要
The results of recent single event gate rupture and single event burnout testing on power MOSFETS are presented. The recent test data show a considerable drop in failure voltage in comparison to manufacturer data for device ratings over 130 V. The effect of range is considered to account for this difference. The methods and practices for testing and data analyses that need to be used for adequate SEE testing of power MOSFETs are also presented.
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