An analysis of the superinjection phenomenon in heterostructure devices

The principles of superinjection are elucidated through an analysis of the injection properties of p (GaAs) -p (AlGaAs) -n (AlGaAs) heterostructure devices. It is shown that under forward bias, the quasi-Fermi level is discontinuous at the heterojunction interface. The threshold currents above which superinjection takes place for different device parameters are calculated. The results are useful in designing heterojunction lasers and related devices.