Double-junction amorphous silicon-based solar cells with 11% stable efficiency

The performance of dual-band gap, double-junction amorphous silicon alloy-based solar cells in which the component cells have different degrees of current mismatch has been studied under annealed and light-soaked conditions. Using a profiled band gap amorphous silicon-germanium alloy in the bottom cell, a stabilized active-area efficiency of 11.16% has been achieved.