超晶格
热导率
材料科学
电导率
位错
表征(材料科学)
图层(电子)
光电子学
复合材料
纳米技术
化学
物理化学
作者
Theodorian Borca‐Tasciuc,Weili Liu,Jianlin Liu,Taofang Zeng,D. W. Song,C. D. Moore,Gang Chen,K.L. Wang,Mark S. Goorsky,T. Radetić,R. Gronsky,Xiangzhong Sun,M. S. Dresselhaus
标识
DOI:10.1109/ict.1999.843368
摘要
We report in this paper the thermal conductivity measurement of Si/Ge superlattices as a function of the temperature and the period thickness. The symmetrized Si/Ge superlattices are grown by MBE on Si substrates with a graded buffer layer. A comparative 3/spl omega/ method is used to measure the thermal conductivity of the buffer and the superlattices between 80K-300K. The thermal conductivity is carried out in conjunction with X-ray and TEM sample characterization. The measured thermal conductivity values are lower than that of their corresponding alloys and show a decreasing trend with increasing period thickness which are corroborated with the TEM characterization of the dislocation density.
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