等效串联电阻
肖特基势垒
二极管
肖特基二极管
矩形势垒
电压
光电子学
系列(地层学)
凝聚态物理
材料科学
化学
物理
量子力学
生物
古生物学
作者
G. S. Chilana,R. S. Gupta
摘要
The Norde function [J. Appl. Phys. 50, 5052 (1979)] used for measuring the barrier height, series resistance, and ideality factor of a Schottky barrier diode has been modified to obtain the same parameters for a triangular barrier diode (TBD). Unlike Schottky barrier diodes, the barrier height of a TBD depends upon the applied voltage and changes linearly with it. In order to calculate the additive term in the TBD barrier height, the modified function is therefore plotted for both reverse and forward bias cases. It is shown later that the modified Norde function enhances the accuracy of the results.
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