A ‘mesh’ seed layer for improved through-silicon-via fabrication

This paper describes an improved method of forming and removing seed layers for through-silicon-vias (TSVs) in applications such as MEMS, sensors and packaging (silicon carrier, for example). A 'mesh seed layer' is proposed to reduce the pinch-off time and facilitate simpler and mechanical-free removal, the latter being possibly important when sensitive MEMS/sensor devices are pre-fabricated on the wafer. As a result, the proposed process may serve as a post-MEMS/sensor method of forming TSVs.