从头算
激发态
哈密顿量(控制论)
钻石
密度泛函理论
中心(范畴论)
物理
赫巴德模型
凝聚态物理
结晶学
原子物理学
材料科学
量子力学
化学
数学
数学优化
复合材料
超导电性
作者
Péter Udvarhelyi,Gergő Thiering,Elisa Londero,Ádám Gali
出处
期刊:Physical review
[American Physical Society]
日期:2017-10-30
卷期号:96 (15)
被引量:10
标识
DOI:10.1103/physrevb.96.155211
摘要
The ${\text{N}}_{2}\mathrm{V}$ defect in diamond is characterized by means of ab initio methods relying on density functional theory calculated parameters of a Hubbard model Hamiltonian. It is shown that this approach appropriately describes the energy levels of correlated excited states induced by this defect. By determining its critical magneto-optical parameters, we propose to realize a long-living quantum memory by ${\text{N}}_{2}\mathrm{V}$ defect, i.e., $H3$ color center in diamond.
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