异质结
材料科学
响应度
石墨烯
光电子学
半导体
纳米技术
表征(材料科学)
数码产品
硅
工程物理
光电探测器
电气工程
物理
工程类
作者
Nengjie Huo,Yujue Yang,Jingbo Li
出处
期刊:Journal of Semiconductors
[IOP Publishing]
日期:2017-03-01
卷期号:38 (3): 031002-031002
被引量:95
标识
DOI:10.1088/1674-4926/38/3/031002
摘要
2D materials including graphene and TMDs have proven interesting physical properties and promising optoelectronic applications. We reviewed the growth, characterization and optoelectronics based on 2D TMDs and their heterostructures, and demonstrated their unique and high quality of performances. For example, we observed the large mobility, fast response and high photo-responsivity in MoS2, WS2 and WSe2 phototransistors, as well as the novel performances in vdW heterostructures such as the strong interlayer coupling, am-bipolar and rectifying behaviour, and the obvious photovoltaic effect. It is being possible that 2D family materials could play an increasingly important role in the future nano- and opto-electronics, more even than traditional semiconductors such as silicon.
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