材料科学
光电子学
晶体硅
共发射极
激光器
非晶硅
异质结
激光烧蚀
太阳能电池
硅
电介质
光学
图层(电子)
纳米技术
物理
作者
Menglei Xu,Twan Bearda,Miha Filipič,Hariharsudan Sivaramakrishnan Radhakrishnan,Ivan Gordon,Jozef Szlufcik,Jef Poortmans
标识
DOI:10.1016/j.solmat.2018.06.027
摘要
In early 2017, the world record efficiency for single-junction crystalline silicon (c-Si) solar cells was achieved by merging amorphous silicon (a-Si:H)/c-Si heterojunction technology and back-contact architecture. However, to fabricate such silicon heterojunction interdigitated back-contact (SHJ-IBC) solar cells, complex a-Si:H patterning steps are required to form the interdigitated a-Si:H strips at the back side of the devices. This fabrication complexity raises concerns about the commercial potential of such devices. In this work, a novel process scheme for a-Si:H patterning using damage-free laser ablation is presented, leading to a fast, simple and photolithography-free emitter patterning approach for SHJ-IBC solar cells. To prevent laser-induced damage to the a-Si:H/c-Si heterocontact, an a-Si:H laser-absorbing layer and a dielectric mask are deposited on top of the a-Si:H/c-Si. Laser ablation only removes the top a-Si:H layer, reducing laser damage to the bottom a-Si:H/c-Si heterocontact under the dielectric mask. This dielectric mask is a distributed Bragg reflector (DBR), resulting in a high reflectance of 80% at the laser wavelength and thus providing additional protection to the a-Si:H/c-Si heterocontact. Using such simple a-Si:H patterning method, a proof-of concept 4-cm2 SHJ-IBC solar cell with an efficiency of up to 22.5% is achieved.
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