铁电性
凝聚态物理
偶极子
压电响应力显微镜
二次谐波产生
物理
材料科学
多铁性
极化密度
反铁电性
极化(电化学)
格子(音乐)
缩放比例
电介质
光学
光电子学
磁化
量子力学
化学
磁场
物理化学
几何学
数学
激光器
声学
作者
Jun Xiao,Hanyu Zhu,Ying Wang,Wei Feng,Yunxia Hu,Arvind Dasgupta,Yimo Han,Yuan Wang,David A. Muller,Lane W. Martin,PingAn Hu,Xiang Zhang
标识
DOI:10.1103/physrevlett.120.227601
摘要
Out-of-plane ferroelectricity with a high transition temperature in ultrathin films is important for the exploration of new domain physics and scaling down of memory devices. However, depolarizing electrostatic fields and interfacial chemical bonds can destroy this long-range polar order at two-dimensional (2D) limit. Here we report the experimental discovery of the locking between out-of-plane dipoles and in-plane lattice asymmetry in atomically thin In_{2}Se_{3} crystals, a new stabilization mechanism leading to our observation of intrinsic 2D out-of-plane ferroelectricity. Through second harmonic generation spectroscopy and piezoresponse force microscopy, we found switching of out-of-plane electric polarization requires a flip of nonlinear optical polarization that corresponds to the inversion of in-plane lattice orientation. The polar order shows a very high transition temperature (∼700 K) without the assistance of extrinsic screening. This finding of intrinsic 2D ferroelectricity resulting from dipole locking opens up possibilities to explore 2D multiferroic physics and develop ultrahigh density memory devices.
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