材料科学
钝化
电介质
光电子学
晶体管
高-κ电介质
兴奋剂
MOSFET
纳米技术
氧气
工程物理
电气工程
电压
图层(电子)
化学
有机化学
工程类
作者
Lu Liu,Wing Man Tang,P. T. Lai
出处
期刊:Coatings
[MDPI AG]
日期:2019-03-27
卷期号:9 (4): 217-217
被引量:47
标识
DOI:10.3390/coatings9040217
摘要
This paper reviews the studies on La-based high-k dielectrics for metal-oxide-semiconductor (MOS) applications in recent years. According to the analyses of the physical and chemical characteristics of La2O3, its hygroscopicity and defects (oxygen vacancies, oxygen interstitials, interface states, and grain boundary states) are the main problems for high-performance devices. Reports show that post-deposition treatments (high temperature, laser), nitrogen incorporation and doping by other high-k material are capable of solving these problems. On the other hand, doping La into other high-k oxides can effectively passivate their oxygen vacancies and improve the threshold voltages of relevant MOS devices, thus improving the device performance. Investigations on MOS devices including non-volatile memory, MOS field-effect transistor, thin-film transistor, and novel devices (FinFET and nanowire-based transistor) suggest that La-based high-k dielectrics have high potential to fulfill the high-performance requirements in future MOS applications.
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