NMOS逻辑
PMOS逻辑
跨导
CMOS芯片
电气工程
噪声系数
晶体管
公共门
放大器
功率增益
低噪声放大器
电子工程
功率消耗
材料科学
工程类
功率(物理)
物理
电压
量子力学
作者
S.B.T. Wang,Ali M. Niknejad,R.W. Brodersen
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:2006-10-30
卷期号:41 (11): 2449-2456
被引量:122
标识
DOI:10.1109/jssc.2006.883321
摘要
This paper presents a sub-mW ultra-wideband (UWB) fully differential CMOS low-noise amplifier (LNA) operating below 960 MHz for sensor network applications. By utilizing both nMOS and pMOS transistors to boost the transconductance, coupling the input signals to the back-gates of the transistors, and combining the common-gate and shunt-feedback topologies, the LNA achieves 13 dB of power gain, a 3.6 dB minimum noise figure, and -10 dBm of IIP3 with only 0.72 mW of power consumption from a 1.2 V supply
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