CMOS芯片
逐次逼近ADC
计算机科学
电子工程
电气工程
工程类
电容器
电压
出处
期刊:International Solid-State Circuits Conference
日期:2016-01-01
被引量:18
标识
DOI:10.1109/isscc.2016.7418107
摘要
In recent years, the operation speed of SAR ADCs has improved with the scaling of CMOS technology. SAR ADCs achieve a few hundreds of MS/s with 8-to-10b resolution. The SNR of high-speed SAR ADCs is mainly dominated by comparator noise and usually limited to 50 to 60dB. The power consumption increases exponentially to suppress comparator noise in a limited comparison time to improve SNR. Noise-tolerant SAR ADCs [1] reduce comparator power in the first few bit cycles by using a coarse comparator. However, the fine comparator in the remaining bit cycles still consumes significant power to achieve an SNR greater than 60dB. SAR-assisted pipelined ADCs [2,3] do not require a low-noise comparator, but design restrictions in advanced CMOS processes make high-performance amplifier design challenging. Using a low-gain or a dynamic amplifier induces gain errors between stages. Besides, the amplifier and back-end stages result in extra noise and area. Digital-slope ADCs [4] are inherently low-noise by quantizing the signal in the time domain, but the hardware cost grows exponentially with resolution and the maximum conversion rate is halved with each additional bit of resolution. Hence this ADC type is unattractive for resolutions higher than 8b. This paper reports a 12b hybrid ADC combining a 7b low-power SAR coarse ADC with a 6b low-noise digital-slope fine ADC. The 100MS/s ADC achieves 64.43dB SNDR at Nyquist input with 0.35mW from a 0.9V supply.
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