Experiments on the modification of the bi-layer structure in CdS/CuInSe/sub 2/ devices

Preliminary studies of modifications of the standard bilayer approach to CdS/CuInSe/sub 2/ device fabrication are reported. It is shown that the incorporation of CuIn/sub 1-x/Ga/sub x/Se/sub 2/ and CuIn/sub 1-x/Al/sub x/Se/sub 2/ quaternary alloys into the space-charge region substantially enhances open-circuit voltage. Short-circuit current losses are minimized when thin discrete layers of these alloys are placed at the selenide/sulfide interface. Placing CuGaSe/sub 2/ at the back contact of the device enhances the near-infrared spectral response. The application of cyanide- and chromium-based chemical treatments improves overall device performance through the removal of bulk secondary phases and reduction of interface recombination centers.< >