开路电压
制作
材料科学
光电子学
铬
图层(电子)
黄铜矿
硫化物
双层
薄膜
分析化学(期刊)
化学
纳米技术
电压
电气工程
冶金
病理
工程类
替代医学
医学
铜
生物化学
色谱法
膜
作者
J. R. Tuttle,M. Ruth,D. Albin,A. Mason,R. Noufi
标识
DOI:10.1109/pvsc.1988.105965
摘要
Preliminary studies of modifications of the standard bilayer approach to CdS/CuInSe/sub 2/ device fabrication are reported. It is shown that the incorporation of CuIn/sub 1-x/Ga/sub x/Se/sub 2/ and CuIn/sub 1-x/Al/sub x/Se/sub 2/ quaternary alloys into the space-charge region substantially enhances open-circuit voltage. Short-circuit current losses are minimized when thin discrete layers of these alloys are placed at the selenide/sulfide interface. Placing CuGaSe/sub 2/ at the back contact of the device enhances the near-infrared spectral response. The application of cyanide- and chromium-based chemical treatments improves overall device performance through the removal of bulk secondary phases and reduction of interface recombination centers.< >
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