杂质
材料科学
碳化硅
X射线光电子能谱
分析化学(期刊)
扫描电子显微镜
粒子(生态学)
透射电子显微镜
碳化物
硅
无定形固体
冶金
化学工程
结晶学
纳米技术
复合材料
化学
海洋学
有机化学
色谱法
工程类
地质学
作者
Dong Feng,Zhaobo Qin,Quanxing Ren,Shihao Sun,Qian Xia,Hongqiang Ru,Wei Wang,Shiyuan Ren,Cuiping Zhang
标识
DOI:10.1016/j.ceramint.2021.09.095
摘要
In this study, the forms of occurrence of impurity elements in silicon carbide (SiC) with different particle sizes were systematically investigated using a combination of X-ray diffraction (XRD), inductively coupled plasma-atomic emission spectrometry (ICP-OES), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS). The experimental results showed that in SiC powders prepared using the Acheson process, the contents of O, free-Si, free-C, and Fe impurities are high, and those of other trace impurity elements follow the order: Ti > Al > Ni > V. Moreover, O impurities mainly cover the SiC particle surface in the form of amorphous SiO2. Fe impurities exist around SiC particles as Fe2O3, FexSiy, FexSiyTiz, and FexAlySiz phases. Impurity elements are often introduced during the smelting of SiC and/or during milling or subsequent storage.
科研通智能强力驱动
Strongly Powered by AbleSci AI