氢
材料科学
氢传感器
钨
硅
光电子学
谐振器
灵敏度(控制系统)
每个符号的零件数
氧化物
干涉测量
半导体
光学
电子工程
化学
冶金
有机化学
钯
催化作用
工程类
物理
生物化学
作者
Sosuke Matsuura,Naoki Yamasaku,Yoshiaki Nishijima,Shinji Okazaki,Taro Arakawa
出处
期刊:Sensors
[MDPI AG]
日期:2019-12-23
卷期号:20 (1): 96-96
被引量:20
摘要
Hydrogen gas has attracted attention as a new energy carrier, and simple but highly sensitive hydrogen sensors are required. We fabricated an optical hydrogen sensor based on a silicon microring resonator (MRR) with tungsten oxide (WO3) using a complementary metal-oxide-semiconductor (CMOS)-compatible process for the MRR and a sol-gel method for the WO3 layer and investigated its sensing characteristics at device temperatures of 5, 20, and 30 °C. At each temperature, a hydrogen concentration of as low as 0.1 vol% was successfully detected. The gas sensitivity increased with decreasing temperature. The dependence of the sensitivity on the device temperature can be attributed to the thickness of tungsten bronze (HxWO3) formed by WO3 during exposure to hydrogen gas. In addition, a hydrogen gas sensor based on a silicon-MRR-enhanced Mach–Zehnder interferometer (MRR-MZI) is proposed and its significantly high sensing ability using improved changes in the transmittance of light is theoretically discussed.
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