Crystal Growth by MBE based on Monte-Carlo Simulation and Analytical Method

The crystal growth on the stepped surface by MBE is studied by means of Monte-Carlo(MC) simulation based on the SOS model to compare with the previous results of the path probability method(PPM). Both results agree qualitatively well with those of RHEED measurements on GaAs(001) MBE growth, showing the usefulness of the PPM calculation complementary to the MC simulation.