单层
薄脆饼
光电子学
材料科学
外延
图层(电子)
数码产品
晶体管
堆积
双层
场效应晶体管
纳米技术
电压
电气工程
化学
工程类
有机化学
生物化学
膜
作者
Qinqin Wang,Jian Tang,Xiaomei Li,Jinpeng Tian,Jing Liang,Na Li,Depeng Ji,Lede Xian,Yutuo Guo,Lü Li,Qinghua Zhang,Yanbang Chu,Wei Zheng,Yanchong Zhao,Luojun Du,Hua Yu,Xuedong Bai,Lin Gu,Kaihui Liu,Wei Yang,Rong Yang,Dongxia Shi,Guangyu Zhang
摘要
The 2D semiconductor of MoS2 has great potential for advanced electronics technologies beyond silicon. So far, high-quality monolayer MoS2 wafers have been available and various demonstrations from individual transistors to integrated circuits have also been shown. In addition to the monolayer, multilayers have narrower band gaps but improved carrier mobilities and current capacities over the monolayer. However, achieving high-quality multi-layer MoS2 wafers remains a challenge. Here we report the growth of high-quality multi-layer MoS2 4-inch wafers via the layer-by-layer epitaxy process. The epitaxy leads to well-defined stacking orders between adjacent epitaxial layers and offers a delicate control of layer numbers up to six. Systematic evaluations on the atomic structures and electronic properties were carried out for achieved wafers with different layer numbers. Significant improvements in device performances were found in thicker-layer field-effect transistors (FETs), as expected. For example, the average field-effect mobility (μFE) at room temperature (RT) can increase from ∼80 cm2·V-1·s-1 for monolayers to ∼110/145 cm2·V-1·s-1 for bilayer/trilayer devices. The highest RT μFE of 234.7 cm2·V-1·s-1 and record-high on-current densities of 1.70 mA·μm-1 at Vds = 2 V were also achieved in trilayer MoS2 FETs with a high on/off ratio of >107. Our work hence moves a step closer to practical applications of 2D MoS2 in electronics.
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