光催化
兴奋剂
热液循环
GSM演进的增强数据速率
吸附
化学
催化作用
电子
基面
离解(化学)
氨
半导体
氮气
材料科学
光化学
纳米技术
无机化学
化学工程
结晶学
物理化学
有机化学
物理
光电子学
量子力学
计算机科学
电信
工程类
作者
Biao Hu,Binghao Wang,Zhangjun Bai,Lang Chen,Jun‐Kang Guo,Sheng Shen,Ting‐Liang Xie,Chak‐Tong Au,Lilong Jiang,Shuang‐Feng Yin
标识
DOI:10.1016/j.cej.2022.136211
摘要
The creation of active sites on semiconductor catalysts for the adsorption of N2 and dissociation of nonpolar N≡N bond is a key issue for photocatalytic N2 reduction reaction (PNRR). According to density function theory calculation on MoS2, the Mo rather than the S edge sites are active, and those on basal planes not. It is disclosed that Mn doping is an effective way to boost the activity of MoS2 by modifying the edge sites. The Mn-modified MoS2 has higher exposure of Mo edge sites due to the formation of S vacancies. It is noted that the activity of original Mo edge sites remains unaltered, while the inertness of S edge sites for N2 adsorption moderated. Furthermore, the injection of electrons into the N≡N bond is promoted, leading to lowering of energy barrier for N2 reduction. Finally, through a simple hydrothermal method we prepared MoS2 that is rich in edge sides at the basal plane by Mn doping. High ammonia production rate of up to 213.2 μmol g−1h−1 is achieved, which is 5.3 times that of pristine MoS2 and superior to most of the reported MoS2-based photocatalysts in the absence of sacrificial agent.
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