Controlled autocrystallization in magnetron co-sputtered Si–Al films

Results of investigations on Al and Si segregation effects in μm-thick magnetron co-deposited Si–Al films are reported. Three characteristic samples of Si–Al films were studied differing by the surface resistance (high, low and intermediate). It was found that increase of Al content in the film results in its segregation to a separate crystalline phase, which is accompanied by emergence of c-Si phase, fraction of which is also increased with Al content. It was demonstrated that silicon crystallization process is governed by redistribution of components in the depth of the film, which can be attributed to the known aluminum-induced crystallization (AIC) process. This redistribution of Al and Si crystalline phases in amorphous matrix can be utilized to tailor the electrophysical properties of the resulting coatings which for applications in perspective mm-band RF devices components.