同质结
材料科学
光电子学
二极管
图层(电子)
隧道枢纽
耗尽区
波长
发光二极管
杂质
紫外线
电压
光学
量子隧道
化学
半导体
电气工程
纳米技术
异质结
物理
工程类
有机化学
作者
Kengo Nagata,Satoshi Anada,Hiroshi Miwa,Shinichi Matsui,Shinya Boyama,Yoshiki Saito,Maki Kushimoto,Yoshio Honda,Tetsuya Takeuchi,Hiroshi Amano
标识
DOI:10.35848/1882-0786/ac60c7
摘要
Abstract We demonstrated the structural optimization of AlGaN tunnel junction (TJ) deep-ultraviolet light-emitting diodes by changing the thickness and impurity concentrations of p + -type and n + -type AlGaN constituting the TJ. By decreasing the total thickness of the TJ to 23 nm, the operating voltage reached a minimum of 8.8 V at 63 A cm −2 . Further decrease in TJ thickness markedly increases the operating voltage. This finding implies that the depletion layer width becomes greater than the TJ thickness if it is smaller than 12 nm. Therefore, we conclude that the TJ thickness must be greater than the depletion layer width.
科研通智能强力驱动
Strongly Powered by AbleSci AI