电气工程
正激变换器
电容器
电压倍增器
反激变换器
升压变换器
变压器
电压
门驱动器
充电泵
工程类
Ćuk转换器
漏感
电子工程
分压器
跌落电压
作者
Minho Choi,Deog‐Kyoon Jeong
出处
期刊:IEEE Transactions on Power Electronics
[Institute of Electrical and Electronics Engineers]
日期:2022-03-24
卷期号:37 (9): 10213-10225
被引量:10
标识
DOI:10.1109/tpel.2022.3162245
摘要
A high step-down ratio three-level half-bridge (TLHB) dc–dc converter with a current-doubler rectifier is presented for power conversion from a 48-to-60-V input to a 0.5-to-1-V output. The proposed TLHB topology and operation employed on the primary side improve the power-conversion efficiency by reducing the switching loss while minimizing the turn ratio of the transformer by converting the input voltage down to one quarter on the primary side. Moreover, it reduces the voltage stress on switches by half, thereby enabling the converter to be implemented with Si transistors with low breakdown voltage. The designed TLHB gate-driver IC minimizes the delay mismatches in gate drivers and mitigates the effect of the leakage inductance of the transformer, reducing the voltage imbalance on the flying capacitor without any balancing scheme in the controller. The proposed dc–dc converter implemented with 40-V Si transistors for the primary-side switches achieves 92.8% peak efficiency while supporting the maximum load current of 60 A and the maximum input voltage of 60 V. The converter with the proposed TLHB gate driver IC shows less than 0.8% voltage imbalance on the flying capacitor.
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