Self-powered CsCu2I3/Si heterojunction UV photodetectors prepared by pulsed-laser deposition

All-inorganic perovskite CsCu2I3 thin films have been prepared on Si(100) substrates by pulsed laser deposition technology. And the influence of the substrate temperatures on the morphology, structure and optical properties of the CsCu2I3 films was investigated by SEM, XRD, PL and absorption spectra. A prototype CsCu2I3/Si n-n heterojunction UV photodetection device was constructed with LiF/Al and Au Ohmic contact electrodes. The photodetector demonstrates excellent self-powered photoresponse performance with an on/off ratio of ~2150 at 0 V. The device also exhibits good spectral selectivity and photoresponse characteristics in the UV range (280–370 nm). The peak responsivity (R) and specific detectivity (D*) of the CsCu2I3/Si heterojunction device are 7.1 mA/W and 2.6 × 1011 Jones at 0 V and 330 nm (~700 μW/cm2) light illumination, and shows good stability and reproducibility.