Abstract Synthesis of high‐performance thermoelectric (TE) materials with tunable compositions and nanostructures normally require sophisticated and high‐cost methods, such as high‐temperature melting and solid‐state reactions, which consume a large amount of time and energy and incur high costs. Herein, a fast, reliable, low‐cost, and environmentally friendly method, namely the vacuum‐induced method, is developed to rapidly synthesize Cu 2 S‐based materials with high TE performance. By mixing finely ground powders of metal‐Cu and S at room temperature, Cu 2–x S compounds with a tunable x varied from 0–0.07 can be instantly formed by a quick sulfurization reaction once the mixture is placed inside a low vacuum (≈about 30 Pa and beyond). The atomic mechanism of Cu 2–x S formation is studied by transmission electron microscopy, as a heterogeneous growth with the diffusion of both Cu + ‐cations and S 2− ‐anions. In a low vacuum, the sulfur vapor is preferably attached to the copper surface with rich defected sites such as atomic vacancies, steps, and edges. The synthesized Cu 2–x S powders with further plasma‐activated sintering treatment show high TE performance with ZT ≈ 1.56 around 800 K. Such a simple synthesis method may provide an effective and low‐cost way to prepare sulfides with potential applications in TE materials and solid electrolytes.