Influence of different test strategies on the power cycling test results of 6.5 kV SiC MOSFETs

When silicon carbide power devices are subjected to power cycling tests, specific aspects must be considered for the evaluation of test results in order to investigate aging mechanisms of the packaging technology. A threshold voltage drift as well as bipolar degradation can influence the results depending on the test procedure, while a higher probability of bipolar degradation is given, especially for high-voltage devices. In this paper, four 6.5 kV modules with standard packaging technology have been investigated with two different test procedures in power cycling tests.