Protection Effects Using Transient Voltage Suppressor Diodes Based Circuits Under High-Power Microwave Pulses

This article demonstrates the protection effects using transient voltage suppressor (TVS) diodes based circuits under high-power microwave (HPM) pulses. Two types of TVS diodes were studied, and their dynamic resistances versus the input power were obtained. Five types of topologies using these two TVS diodes based circuits were designed and compared with their voltage–ampere characteristics. The dynamic resistances of each branch of two typical circuits were simulated and compared. These TVS diodes based protection circuits were measured under HPM pulses with their protection effects recorded. The highest protection ratio of these circuits is approximately 17–20 dB when the input power of HPM pulses ranges from 50 to 62.5 dBm. The simulated and measured results show some correlations. This analysis is useful for further electromagnetic protections under HPM pulses.