Temperature-dependent electrical characteristics of β–Ga2O3 trench Schottky barrier diodes via self-reactive etching

High performance β–Ga2O3 trench Schottky barrier diodes (SBDs) were demonstrated with the employment of a novel etching technique called self-reactive etching (SRE). Owing to the high-quality surface without any etched damages and impurities, the β–Ga2O3 trench SBDs showed temperature-dependent electrical characteristics. Negligible charge trapping and hysteresis indicated the high quality of the interface between the Al2O3 dielectric and the β–Ga2O3 layer. Only a few changes of the capacitance–voltage curves measured at different temperatures have been shown, suggesting an excellent thermal stability. A high current density of 1228 A cm−2 and ION/IOFF ratio of 1010 indicated the excellent rectifying characteristics. An ideality factor of 1.23 and barrier height of 1.58 eV confirmed the surface repair and reconstruction from the SRE process. These results indicate that SRE can be beneficial for the β–Ga2O3 etching and the future development of β–Ga2O3 power electronics.