单层压电片
压电
压电系数
材料科学
微加工
PMUT公司
纳米发生器
压电加速度计
复合材料
微电子机械系统
硅
薄膜
光电子学
声学
纳米技术
病理
制作
物理
替代医学
医学
作者
Genki Jikyo,Kouta Onishi,Takumi Nishikado,Isaku Kanno,Kensuke Kanda
摘要
In this study, we propose a new piezoelectric measurement method using unimorph microcantilevers to evaluate precise values of direct and converse piezoelectric coefficients for piezoelectric microelectromechanical system applications. We fabricated unimorph microcantilevers comprising 3-μm-thick polycrystalline Pb(Zr,Ti)O3 (PZT) thin films on a 20-μm-thick silicon (Si) layer. The converse piezoelectric coefficient was measured as |e31,f| = 3.9–5.8 C/m2, which was in good agreement with the measurement results of PZT thin films without microfabrication. The direct piezoelectric properties of the PZT microcantilevers were measured at the resonance frequency of each microcantilever, and |e31,f| was ∼2 C/m2, which was consistent with previous reports on the piezoelectric properties of a PZT thin film on Si. Since the measurement results included the effects of the stress condition and microfabrication damage, the measurement method of this study can evaluate the actual piezoelectric coefficient of piezoelectric properties in microdevice structures.
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