Ultra-scaled MOCVD MoS2 MOSFETs with 42nm contact pitch and 250µA/µm drain current

We show that downscaling the top-contact length to 13nm induces no penalty on the electrical characteristics for CVD MoS ₂ FETs. We demonstrate this for devices with different gate-oxides and operating in both channel and contact-limited regimes, thus confirming carrier injection at the edge of the contact metal. Consequently, we have scaled the device footprint achieving an I _on =250μA/μm and excellent SS _min =80mV/dec for 50nm SiO ₂ and 4nm HfO ₂ gate oxides, respectively.