光探测
材料科学
响应度
光电子学
化学气相沉积
半导体
外延
异质结
平面的
带隙
纳米技术
光电探测器
图层(电子)
计算机科学
计算机图形学(图像)
作者
Mei Zhao,Jianwei Su,Yang Zhao,Peng Luo,Fakun Wang,Wei Han,Yuan Li,Xiaotao Zu,Liang Qiao,Tianyou Zhai
标识
DOI:10.1002/adfm.201909849
摘要
Abstract As an important member of group VA–VIA semiconductors, 2D Sb 2 Se 3 has drawn widespread attention thanks to its outstanding optoelectronic properties as compared to the bulk material. However, due to the intrinsic chain‐like crystal structure, the controllable synthesis of ultrathin 2D planar Sb 2 Se 3 nanostructures still remains a huge challenge. Herein, for the first time, the crystal structure limitation is overcome and the successful structural evolution of 2D ultrathin Sb 2 Se 3 flakes (as thin as 1.3 nm), by introducing a sodium‐mediated chemical vapor deposition (CVD) growth method, is realized. The formation of 2D planar geometry is mainly attributed to the preferential growth of (010) plane with the lowest formation energy. The thickness‐dependent band structure of 2D Sb 2 Se 3 flakes shows a wide absorption band from UV to NIR region (300–1000 nm), suggesting its potential application in broadband photodetection. Strikingly, the Sb 2 Se 3 flakes–based photodetector demonstrates excellent performance such as broadband response varying from UV to NIR region, high responsivity of 4320 mA W −1 , fast response time (τ rise ≈ 13.16 ms and τ decay ≈ 9.61 ms), and strong anisotropic ratio of 2.5@ 532 nm, implying promising potential application in optoelectronics.
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