鞠躬
价带
导带
材料科学
带隙
凝聚态物理
半金属
GSM演进的增强数据速率
电子能带结构
极化(电化学)
光电子学
物理
化学
电子
计算机科学
电信
量子力学
物理化学
哲学
神学
作者
Stefan Schulz,A. Miguel,L. T. Tan,P. J. Parbrook,Robert Martin,Eoin P. O’Reilly
标识
DOI:10.7567/apex.6.121001
摘要
A combined experimental and theoretical study of the band gap of AlInN is presented, which confirms the breakdown of the virtual crystal approximation (VCA) for the conduction and valence band edges. Composition-dependent bowing parameters for these quantities are extracted. Additionally, composition-dependent band offsets for GaN/AlInN systems are provided. We show that local strain and built-in fields affect the band edges significantly, leading to optical polarization switching at a much lower In composition than expected from a VCA approach.
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