半导体纳米结构
量子点
凝聚态物理
半导体
纳米结构
量子线
量子
物理
弹道传导
纳米线
光电子学
量子点接触
量子霍尔效应
作者
C. W. J. Beenakker,H. van Houten
出处
期刊:Journal of Physics C: Solid State Physics
[IOP Publishing]
日期:1991-01-01
卷期号:44: 1-228
被引量:868
标识
DOI:10.1016/s0081-1947(08)60091-0
摘要
Publisher Summary Quantum transport is conveniently studied in a two-dimensional electron gas (2DEG) because of the combination of a large Fermi wavelength and large mean free path. Semiconductor nanostructures are unique in offering the possibility of studying quantum transport in an artificial potential landscape. This is the regime of ballistic transport in which scattering with impurities are neglected. The chapter presents a self-contained account of these three novel transport regimes in semiconductor nanostructures. The study of quantum transport in semiconductor nanostructures is motivated by more than scientific interest. The fabrication of nanostructures relies on sophisticated crystal growth and lithographic techniques that exist because of the industrial effort toward the miniaturization of transistors. Conventional transistors operate in the regime of classical diffusive transport, which breaks down on short length scales. The discovery of novel transport regimes in semiconductor nanostructures provides options for the development of innovative future devices.
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