薄膜晶体管
无定形固体
光电子学
材料科学
栅极电介质
阈下摆动
铟
晶体管
跨导
电介质
分析化学(期刊)
电气工程
场效应晶体管
纳米技术
图层(电子)
结晶学
化学
电压
工程类
色谱法
作者
Subhranu Samanta,Umesh Chand,Shengqiang Xu,Kaizhen Han,Ying Wu,Chengkuan Wang,Annie Kumar,Hasita Veluri,Yida Li,Xuanyao Fong,Aaron Thean,Xiao Gong
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2020-06-01
卷期号:41 (6): 856-859
被引量:52
标识
DOI:10.1109/led.2020.2985787
摘要
We report high performance amorphous Indium-Gallium-Zinc-Oxide (${a}$ -IGZO) thin-film transistors (TFTs) with 10 nm atomic-layer-deposited HfO2 as the gate dielectric, achieving subthreshold swing (SS) of 70.2 mV/decade, high effective mobility ($\mu _{\textit {eff}}$ ) of 55.3cm 2 /$\text{V}\cdot \text{s}$ at an inversion carrier density ($N_{\textit {inv}}$ ) of $5\times 10^{{12}}$ cm -2 , and large $I_{ON}/\text{I}_{OFF}$ of >10 9 . Furthermore, very good device-to-device uniformity has been confirmed by the statistical distribution of SS and maximum transconductance (Gm, max) measured from 20 pristine TFT devices. This ${a}$ -IGZO TFT has immense potential for the ultrafast and low power electronic devices for next-generation cost-effective emissive display, image sensing, and hardware for artificial intelligence (AI).
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