Preservation of open circuit voltage in a quantum dot solar cell using GaSb quantum confined superlattice

Quantum dot solar cell (QDSC) is still far below the celebrated Shockley- Queisser limit due to an enhancement in photocurrent only. However, there is very less number of literatures that reports regarding voltage preservation in QDSC, which is one of the most important paradigms in achieving high efficiency. Here a single junction QD embedded intermediate band solar cell (SJ QDIBSC) is designed, which not only preserves the open circuit voltage, but also shows an improvement in short circuit current at the same time. In this work a number of 1-D quantum confined highly mismatched GaSb superlattice is used in the bulk GaAs solar cell, which results an increment in carrier lifetime of minority photo carriers as well as two-photon sub-bandgap photocurrent generation. This model is simulated and validated using Silvaco ATLAS TCAD tool.