有机硅
反对称关系
电负性
部分
有机化学
化学
硅
振动
计算化学
结晶学
立体化学
物理
高分子化学
量子力学
数学物理
作者
Daimay Lin-Vien,Norman B. Colthup,William G. Fateley,Jeanette G. Grasselli
出处
期刊:Elsevier eBooks
[Elsevier]
日期:1991-01-01
卷期号:: 251-261
被引量:11
标识
DOI:10.1016/b978-0-08-057116-4.50021-3
摘要
This chapter discusses the SiH3 stretchings. In the majority of cases, the frequencies of the antisymmetric and symmetric —SiH3 modes are so close as to be indistinguishable. The antisymmetric and symmetric SiH3 stretching frequencies are expected to be considerably closer together than the comparable CH3 frequencies because of the heavier mass of the silicon atom. The same is true for SiH2 stretching frequencies. The —SiH3 deformations exhibit strong infrared (IR) bands in the ranges of 947–930 cm−1 and 930–910 cm−1 that can be attributed to the —SiH3 deformations. The vibrations of a —SiH2— moiety are approximated as stretchings, scissoring, wagging, twisting, and rocking modes. The Si—H stretching frequencies are sensitive to the inductive effect of the substituents. The frequency increases as the sum of the electronegativities of the substituents increases. The chapter discusses the characteristic frequencies of the Si—H compounds.
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