异质结
范德瓦尔斯力
材料科学
半导体
光电子学
载流子
耗尽区
凝聚态物理
量子隧道
纳米技术
化学
物理
有机化学
分子
作者
Chul‐Ho Lee,Gwan‐Hyoung Lee,Arend M. van der Zande,Wenchao Chen,Yilei Li,Minyong Han,Xu Cui,Ghidewon Arefe,Colin Nuckolls,Tony F. Heinz,Jing Guo,James Hone,Philip Kim
标识
DOI:10.1038/nnano.2014.150
摘要
Semiconductor p-n junctions are essential building blocks for modern electronics and optoelectronics. In conventional semiconductors, a p-n junction produces depletion regions of free charge carriers at equilibrium and built-in potentials associated with uncompensated dopant atoms. Carrier transport across the junction occurs by diffusion and drift processes defined by the spatial extent of this region. With the advent of atomically thin van der Waals (vdW) materials and their heterostructures, we are now able to realize a p-n junction at the ultimate quantum limit. In particular, vdW junctions composed of p- and n-type semiconductors each just one unit cell thick are predicted to exhibit completely different charge transport characteristics than bulk junctions. Here we report the electronic and optoelectronic characterization of atomically thin p-n heterojunctions fabricated using vdW assembly of transition metal dichalcogenides (TMDCs). Across the p-n interface, we observe gate-tuneable diode-like current rectification and photovoltaic response. We find that the tunnelling-assisted interlayer recombination of the majority carriers is responsible for the tunability of the electronic and optoelectronic processes. Sandwiching an atomic p-n junction between graphene layers enhances collection of the photoexcited carriers. The atomically scaled vdW p-n heterostructures presented here constitute the ultimate quantum limit for functional electronic and optoelectronic components.
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