Hyosung Choi,Jaeki Jeong,Hak-Beom Kim,Seongbeom Kim,Bright Walker,Gi‐Hwan Kim,Jin Young Kim
出处
期刊:Nano Energy [Elsevier] 日期:2014-07-01卷期号:7: 80-85被引量:481
标识
DOI:10.1016/j.nanoen.2014.04.017
摘要
We demonstrate cesium-doping in methylammonium lead iodide perovskites (CsxMA1−xPbI3) light absorbers to improve the performance of inverted-type perovskite/fullerene planar heterojunction hybrid solar cells. CsxMA1−xPbI3 perovskite devices with an optimized 10% Cs doping concentration exhibit remarkable improvement in device efficiency from 5.51% to 7.68% due to increases in short-circuit current density and open-circuit voltage via increased light absorption at optimum device thickness, improved film morphology and a widening of the energy difference between the valence band of the perovskite and lowest unoccupied molecular orbital level of PCBM.