晶闸管
二极管
阻塞(统计)
串联
材料科学
电气工程
光电子学
功率(物理)
电压
集成门极换流晶闸管
物理
工程类
计算机科学
计算机网络
量子力学
复合材料
作者
F.‐J. Niedernostheide,H.‐J. Schulze,U. Kellner‐Werdehausen,R. Barthelmeß,Jens Przybilla,R. Keller,H. Schoof,D. Pikorz
标识
DOI:10.1109/ispsd.2003.1225245
摘要
For rectifiers with high blocking voltages, the application of field stop layers reduces power losses. Preliminary experimental results are presented from asymmetric 13-kV thyristor samples based on a conventional field stop concept. By connecting a 13-kV diode in series to this asymmetric thyristor, a symmetrically-blocking tandem device can be built. Numerical studies show that the turn-off behavior of the 13-kV diode required for the tandem solution can be significantly improved by a new field stop concept based on an n layer buried in the weakly-doped region of the p/sup +/-n/sup -/-n/sup +/ power diode.
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