P–N defect in GaNP studied by optically detected magnetic resonance

We provide experimental evidence for an intrinsic defect in GaNP from optically detected magnetic resonance (ODMR). This defect is identified as a P–N complex, exhibiting hyperfine structure due to interactions with a nuclear spin I=12 of one P atom and also a nuclear spin I=1 due to one N atom. The introduction of the defect is assisted by the incorporation of N within the studied N composition range of up to 3.1%, under non-equilibrium growth conditions during gas-source molecular beam epitaxy. The corresponding ODMR spectrum was found to be isotropic, suggesting an A1 symmetry of the defect state. The localization of the electron wave function at the P–N defect in GaNP is found to be even stronger than that for the isolated PGa antisite in its parent binary compound GaP.