CMOS芯片
非易失性存储器
电气工程
晶体管
兆位
低功耗电子学
光电子学
计算机科学
功率(物理)
材料科学
工程类
物理
功率消耗
电压
量子力学
作者
Stefan Dünkel,Martin Trentzsch,Ralf P. Richter,P. Moll,C. Fuchs,O. Gehring,M. Majer,Steffen Wittek,Bernd Müller,T. Melde,Halid Mulaosmanovic,Stefan Slesazeck,Stefan Müller,J. Ocker,Marko Noack,D. A. Lohr,P. Polakowski,Johannes Müller,Thomas Mikolajick,J. Höntschel,B. Rice,John Pellerin,Sven Beyer
标识
DOI:10.1109/iedm.2017.8268425
摘要
We show the implementation of a ferroelectric field effect transistor (FeFET) based eNVM solution into a leading edge 22nm FDSOI CMOS technology. Memory windows of 1.5 V are demonstrated in aggressively scaled FeFET cells with an area as small as 0.025 μm 2 At this point program/erase endurance cycles up to 10 5 are supported. Complex pattern are written into 32 MBit arrays using ultrafast program/erase pulses in a 10 ns range at 4.2 V. High temperature retention up to 300 °C is achieved. It makes FeFET based eNVM a viable choice for overall low-cost and low-power IoT applications in 22nm and beyond technology nodes.
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