材料科学
结晶
兴奋剂
晶粒生长
相(物质)
活化能
化学工程
粒度
相变
分析化学(期刊)
结晶学
热力学
复合材料
物理化学
光电子学
色谱法
化学
物理
工程类
有机化学
作者
Xunsi Wang,Junjian Li,Dongfeng Qi,Qiuhua Nie,Xiang Shen,Yegang Lü
标识
DOI:10.1016/j.ceramint.2017.06.114
摘要
The effects of Mg on the structure and phase-change kinetics of Sb7Te3 were investigated for phase change memory application. The results revealed that the addition of Mg increased the crystallization temperature, and crystalline activation energy, while hindering grain growth and suppressing phase separation from Sb+Sb2Te, Sb2Te, to Sb phases. Laser-induced phase-change behavior showed four regions in the Mg-Sb7Te3 films: crystallization, transition toward stability, amorphization and ablation. A reversible switching between crystallization and amorphization occurred more rapidly in Mg-doped Sb7Te3 films than in conventional Ge2Sb2Te5. Evaluation of Johnson-Mehl-Avrami plots indicated that the crystallization mode changed from three, two to one-dimensional grain growth as the Mg-doping level increased. This phenomenon contributed to the rapid phase change of Mg-doped Sb7Te3 films.
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