异质结
堆积
铟
硒化物
范德瓦尔斯力
半导体
光电子学
材料科学
吸收(声学)
化学
分子
复合材料
有机化学
冶金
硒
作者
Naifeng Shen,Xiaodong Yang,Xinxin Wang,Guanghou Wang,Jing Wan
标识
DOI:10.1016/j.cplett.2019.04.055
摘要
Indium selenide (InSe) is a promising two-dimensional photodetector material. However, the photogenerated electron-hole pairs are easy to recombine in simplex InSe semiconductor. Here, we design InSe-based van der Waals heterostructure, InSe/antimonene (β-Sb), based on first-principles. InSe/β-Sb heterostructure possesses intrinsic type-II electronic structure. Simultaneously, the work function of InSe (β-Sb) layer is −5.7 eV (−4.5 eV) which also promotes electrons transfer. In addition, the good optical absorption performance of InSe and β-Sb sublayer is preserved in the heterostructure. Moreover, different stacking mode between InSe/β-Sb does not affect the efficient carrier separation which is convenient to the application of optoelectronics.
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