Design and Manufacturing of 1200V SiC JBS Diodes with Low On-State Voltage Drop and Reverse Blocking Leakage Current

This paper presents the design and fabrication of 1200V-rated SiC JBS diodes in a manufacturing environment. Various designs of p + -grids and edge termination structures were proposed and fabricated on 6-inch SiC substrates. Experimental results show that deeper p + n junctions are necessary to reduce the leakage current in blocking mode of operation. It was also demonstrated that the hybrid-JTE edge termination structure is very efficient to provide a near-ideal breakdown voltage. Ti and Ni Schottky metals were compared with respect to forward voltage drops and reverse blocking behaviors at high temperatures up to 200 °C.