空位缺陷
兴奋剂
带隙
材料科学
吸收边
吸收(声学)
铝
凝聚态物理
分子物理学
原子物理学
结晶学
化学
光电子学
物理
复合材料
冶金
作者
Xiaofan Ma,Yuming Zhang,Linpeng Dong,Renxu Jia
标识
DOI:10.1016/j.rinp.2017.04.023
摘要
In this manuscript, the effects of intrinsic defects on the electronic and optical properties of aluminum-doped β-Ga2O3 are investigated with first-principles calculations. Four types of defect complexes have been considered: AlGa2O3VO (Al-doped β-Ga2O3 with O vacancy), AlGa2O3VGa (Al-doped β-Ga2O3 with Ga vacancy), AlGa2O3Gai (Al-doped β-Ga2O3 with Ga interstitial) and AlGa2O3Oi (Al-doped β-Ga2O3 with O interstitial). The calculation results show that the incorporation of Al into β-Ga2O3 leads to the tendency of forming O interstitial defects. And the bandgap of AlGa2O3 is 4.975 eV, which is a little larger than that of intrinsic β-Ga2O3. When O vacancies exist, a defect energy level is introduced to the forbidden band as a deep donor level, while no defective energy levels occur in the forbidden band with O interstitials. After Al-doped, a slightly blue-shift appears in the intrinsic absorption edge, and an additional absorption peak occurs with O vacancy located in 3.69 eV.
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