掺杂剂
薄膜晶体管
阈值电压
兴奋剂
无定形固体
接受者
材料科学
氢
晶体管
电子迁移率
光电子学
纳米技术
化学物理
化学
电气工程
物理
凝聚态物理
结晶学
工程类
有机化学
电压
图层(电子)
作者
Wengao Pan,Sheng Wang,Yanxin Wang,Zhihe Xia,Fion Sze Yan Yeung,Man Wong,Hoi Sing Kwok,Xinwei Wang,Shengdong Zhang,Lei Lü
标识
DOI:10.1016/j.jallcom.2023.169509
摘要
As the most common external dopant of amorphous oxide semiconductors (AOSs), the hydrogen (H) exhibits great influences on the performance of AOS thin-film transistors (TFTs) and is almost inevitable during device fabrication. In this work, the multiple effects of H doping on the amorphous InGaZnO (IGZO) TFT were systematically investigated by experimental and theoretical calculation methods, and the hydrogenation-resistibility was further investigated. The electrical performances of the hydrogenated IGZO TFT were determined by the concentrations of H itself and oxygen vacancy (Vo). With increasing H content, it separately serves as defect suppressor, donor defect, donor/acceptor transition state and then acceptor defect, resulting in the improved subthreshold slope (SS), negative shift of threshold voltage (Vth), fluctuation of mobility (μFE), and limitation of on-state current (Ion), respectively. The Vo in IGZO is considered to provide the diffusion channel of H dopant, thus determining the H concentration and the electrical behaviors. Furthermore, the hydrogen-resistibility of IGZO was enhanced by using the fluorine (F) dopant to suppress the intrinsic Vo content and weaken the dissociation energy of H-related bonds. The F-IGZO TFT exhibits excellent stabilities even in the H-rich environment. The findings not only deepen the understanding and manipulation of H doping in AOS devices, but also broaden the application scopes.
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