Short Term Overstress Degradation of ESD Avalanche Diodes Breakdown Characteristics

50 Words Abstract – Degradation of ESD avalanche diodes breakdown voltage in BCD process technology as a result of short term (minutes to hours) electrical overstress in avalanche breakdown regime is studied. It is shown, that the magnitude of the breakdown voltage walk-in or walk-out can be adequately predicted by numerical simulation with setup similar Hot Carrier Degradation for charge trapping effect at silicon-oxide interface and is a function of the device structure parameters.