Topological Vortex Domain Engineering for High Dielectric Energy Storage Performance

Abstract Enhancing the energy storage performance of dielectric material through the adoption of a novel domain strategy is highly desirable. In this study, Bi 0.5 Na 0.5 TiO 3 ‐based thin films are fabricated with topological vortex domains (VDs) by controlling the grain size and investigated the correlation between these VDs and the macroscopic polarization response, which is crucial for the energy storage performance. The emergence of VDs, in contrast to conventional ferroelectric domains, promotes polarization reversal in dielectric materials. Additionally, in contrast to the severely reduced saturation polarization typically noted in conventional relaxor ferroelectrics (RFE), the presence of VDs in RFE leads to only a slight reduction in saturation polarization. These two advantages contribute to the superior energy storage performance of the films with VDs. This approach offers a novel and promising direction for developing dielectrics with high‐energy storage capabilities.