电场
响应度
光电探测器
异质结
光电子学
材料科学
铁电性
紫外线
极化(电化学)
肖特基势垒
比探测率
肖特基二极管
光学
电介质
物理
化学
物理化学
量子力学
二极管
作者
X. Z. Lin,Lingyu Wan,Zhengbang Chen,Jinlong Ren,Shuixiu Lin,Dingcheng Yuan,Wenhong Sun,Biaolin Peng
出处
期刊:Optics Express
[The Optical Society]
日期:2024-01-12
卷期号:32 (3): 4627-4627
被引量:3
摘要
Self-powered ultraviolet photodetectors generally operate by utilizing the built-in electric field within heterojunctions or Schottky junctions. However, the effectiveness of self-powered detection is severely limited by the weak built-in electric field. Hence, advances in modulating the built-in electric field within heterojunctions are crucial for performance breakthroughs. Here, we suggest a method to enhance the built-in electric field by taking advantage of the dual-coupling effect between heterojunction and the self-polarization field of ferroelectrics. Under zero bias, the fabricated AgNWs/TiO 2 /PZT/GaN device achieves a responsivity of 184.31 mA/W and a specific detectivity of 1.7 × 10 13 Jones, with an on/off ratio of 8.2 × 10 6 and rise/decay times reaching 0.16 ms/0.98 ms, respectively. The outstanding properties are primarily attributed to the substantial self-polarization of PZT induced by the p -GaN and the subsequent enhancement of the built-in electric field of the TiO 2 /PZT heterojunction. Under UV illumination, the dual coupling of the enhanced heterojunction and the self-polarizing field synergistically boost the photo-generated carrier separation and transport, leading to breakthroughs in ferroelectric-based self-powered photodetectors.
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