抵抗
材料科学
平版印刷术
电子束光刻
聚苯乙烯
X射线光刻
下一代光刻
光电子学
聚合物
光学
纳米技术
复合材料
图层(电子)
物理
作者
Xuewen Cui,Siliang Zhang,Cong Xue,Jiaxing Gao,Yurui Wu,Xudong Guo,Rui Hu,Shuangqing Wang,Jinping Chen,Yi Li,Wenna Du,Guoqiang Yang
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2024-04-09
卷期号:35 (29): 295302-295302
被引量:2
标识
DOI:10.1088/1361-6528/ad3c4c
摘要
To break the resolution limitation of traditional resists, more work is needed on non-chemically amplified resists (non-CARs). Non-CARs based on iodonium salt modified polystyrene (PS-I) were prepared with controllable molecular weight and structure. The properties of the resist can be adjusted by the uploading of iodonium salts on the polymer chain, the materials with a higher proportion of iodonium salts show better lithography performance. By comparing contrast curves and quality of the lithographic patterns, the optimum developing condition of 4-methyl-2-pentanone and ethyl alcohol (v:v = 1:7) was selected. The high-resolution stripes of 15 nm half-pitch (HP) can be achieved by PS-I
科研通智能强力驱动
Strongly Powered by AbleSci AI