石墨烯
材料科学
双层石墨烯
电导率
氧化物
双层
光电子学
凝聚态物理
电阻率和电导率
纳米技术
膜
物理
化学
物理化学
生物化学
量子力学
冶金
作者
F. Peymanirad,Sahar Izadi Vishkayi,Roya Majidi,H. Rahimpour Soleimani
标识
DOI:10.1088/1402-4896/ad5d24
摘要
Abstract Going beyond conventional doping techniques, this work explores the interesting phenomenon of flat bands in single and double layer graphene induced by functionalization with epoxy and hydroxyl groups. We show that these flat bands, located near the Fermi level, provide a new level of control over electronic properties, influencing conductivity and potentially allowing bandgap manipulation. In particular, in bilayer structures we discover a remarkable asymmetry in flat band formation, where less distorted layers exhibit flatter bands and dominate the electronic landscape. Furthermore, the presence of hydrogen bonding in bilayer systems leads to a lower flat band energy, which has promising implications for stability. This work opens new avenues for designing next-generation electronic devices with engineered functionalities by harnessing the power of flat band engineering in functionalized graphene.
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